Thomas Kjellberg Jensen
Doctoral student
Optoelectronic nanowire neuron
Author
Summary, in English
Three different semiconductor nanowires are combined into a single optoelectronic artificial neuron. Our device provides a path towards low power computations with significantly reduced circuit footprint, thus addressing critical limitations in neuromorphic photonics. The false-coloured scanning electron micrograph shown in Figure 1a depicts the fabricated nanowire neuron. Two pin-doped InP nanowires, acting as photodiodes, are connected to an InAs nanowire field-effect transistor (FET); dashed box in Fig. 1a. Since the cathode of one photodiode is connected to the anode of the other via a metal lead, illumination of either will generate charge carriers of opposite charge which are summed across the lead, with the net charge modulating the InAs conductance via the FET. Here, the device is characterized using an optical beam induced current setup.
Department/s
- LTH Profile Area: Photon Science and Technology
- LU Profile Area: Light and Materials
- Synchrotron Radiation Research
- LTH Profile Area: Nanoscience and Semiconductor Technology
- NanoLund: Centre for Nanoscience
- ACT: Advanced Chip Technology
- Solid State Physics
Publishing year
2025
Language
English
Publication/Series
2025 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2025
Links
Document type
Conference paper
Publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
Topic
- Nanotechnology for Electronic Applications
Conference name
2025 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2025
Conference date
2025-06-23 - 2025-06-27
Conference place
Munich, Germany
Status
Published
ISBN/ISSN/Other
- ISBN: 9798331512521