
Anders Mikkelsen
Professor

A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure
Author
Summary, in English
We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated. (c) 2006 American Institute of Physics.
Department/s
- Synchrotron Radiation Research
Publishing year
2006
Language
English
Publication/Series
Applied Physics Reviews
Volume
100
Issue
4
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Atom and Molecular Physics and Optics
Status
Published
ISBN/ISSN/Other
- ISSN: 1931-9401