Interface composition of InAs nanowires with Al2O2 and HfO2 thin films

Summary, in English

Abstract in Undetermined
Vertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al(2)O(3) and HfO(2) films. The native oxide on the NWs is significantly reduced upon high-kappa deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.

• Author: Rainer Timm; Martin Hjort; Alexander Fian; Mattias Borg; Claes Thelander; Jesper N Andersen; Lars-Erik Wernersson; Anders Mikkelsen
• Department/s: NanoLund: Centre for Nanoscience; Synchrotron Radiation Research; Solid State Physics; Department of Electrical and Information Technology
• Publishing year: 2011
• Language: English
• Pages: 1-222907
• Publication/Series: Applied Physics Letters
• Volume: 99
• Issue: 22
• Links: http://dx.doi.org/10.1063/1.3664399
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Materials Engineering
• Keywords: high-k dielectric thin films; alumina; hafnium compounds; indium; compounds; interface phenomena; nanostructured materials; nanowires; semiconductor materials
• Status: Published
• Research group: Nano
• ISBN/ISSN/Other: ISSN: 0003-6951