
Anders Mikkelsen
Professor

Current−Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
Author
Summary, in English
Utilizing semiconductor nanowires for (opto)- electronics requires exact knowledge of their current−voltage properties. We report accurate on-top imaging and I−V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I−V properties with a very small spread in measured values compared to standard techniques.
Department/s
- Synchrotron Radiation Research
- Department of Physics
- NanoLund: Centre for Nanoscience
Publishing year
2013
Language
English
Pages
5182-5189
Publication/Series
Nano Letters
Volume
13
Issue
11
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano-technology
Keywords
- semiconductor nanowire
- scanning tunneling microscopy
- Ohmic contact
- nanowire contacts
- resistivity
Status
Published
Research group
- Nanometer structure consortium (nmC)
ISBN/ISSN/Other
- ISSN: 1530-6992